| 型号 | 制造商 | 描述 | 操作 |
| SKM100GB12T4 [更多] | SEMIKRON | SEMITRANS, 1200V, 100A RoHS: Compliant | 搜索 查看资料 |
| SKM100GB12T4G [更多] | SEMIKRON | IGBT Half-Bridge - Trench, SEMITRANS 2, VCES=1200V, IC=160A, VF=2.5V RoHS: Compliant | 搜索 查看资料 |
| 型号 | 制造商 | 描述 | 操作 |
| SKM100GB12T4 [更多] | SEMIKRON | IGBT MODULE, DUAL N CH, 1.2KV, 160A
| 搜索 |
| 型号 | 制造商 | 描述 | 操作 |
| SKM100GB12T4 [更多] | SEMIKRON | IGBT module Connection: 3 x M5 Fastening: 2 x M6 Configuration: Half-Bridge Housing type: SEMITRANS 2 Collector-emitter saturation voltage: 1.8 V Collector-emitter voltage: 1200 V Energy dissipation during make-time: 15 mJ Energy dissipation during turn-off time: 10.2 mJ
| 搜索 查看资料 |
| 型号 | 制造商 | 描述 | 操作 |
| SKM100GB12T4 [更多] | SEMIKRON | IGBT half-bridge, Urmax:1.2kV, Ic:100A, Ifsm:300A, SEMITRANS2
| 搜索 |
| SKM100GB12T4G [更多] | SEMIKRON | IGBT half-bridge, Urmax:1.2kV, Ic:118A, Ifsm:300A, SEMITRANS3
| 搜索 |
